Title Ultra-Low Input Power Conversion Circuits based on Tunnel-FETs
Subtitle (River Publishers Series in Circuits and Systems)
Author David Cavalheiro, Francesc Moll, Stanimir Valtch
ISBN 9788793609761
List price USD 106.00
Price outside India Available on Request
Original price
Binding Hardbound
No of pages 176
Book size 152 X 235 mm
Publishing year 2018
Original publisher River Publishers (Eurospan Group)
Published in India by .
Exclusive distributors Viva Books Private Limited
Sales territory India, Sri Lanka, Bangladesh, Pakistan, Nepal, .
Status New Arrival
About the book Send Enquiry
  
 

Description:

The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories.

In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources.

Contents:

Preface

Acknowledgements

List of Figures

List of Tables

Chapter 1: Introduction • The Technology Scaling Roadmap so far • New Solutions for Future Technology Nodes • Energy Harvesting in a More than Moore era • Tunnel FETs as a Key Technology for Energy Harvesting • Topics Addressed in This Book • Book Structure • References

Chapter 2: Tunnel FET: State of the Art • The Tunneling Phenomenon • Band-to-Band Tunneling (BTBT) Current • From Tunnel Diode to Gated p-i-n Structure • First Observations of Tunneling in Gated Structures • Structural Improvements for Boosted Performance • Tunnel FET Evolution over the Past Decades • Directions for Further Improvements in Tunneling Devices • A Brief Discussion of the Tunneling Device State of the Art • References

Chapter 3: Tunnel FET: Physical Properties • Thermionic Injection vs. BTBT • Impact of Physical Properties in the TFET Performance • Device Structure and Applied Model • Dielectric Permittivity, EOT, and Body Thickness Impact • Impact of Doping in Drain and Source Regions of Si-TFET • Impact of Materials in a Double-gate TFET • Impact of Doping in Drain and Source Regions for 1PETs with Different Materials • Chapter Summary • References

Chapter 4: Tunnel FET: Electrical Properties • Tunnel FET Models for SPICE Simulations • Analytic TFET Model • TFET Model Based on Lookup Tables • Electrical Characteristics of TFETs • Input Characteristics of TFETs • Output Characteristics of TFETs • Intrinsic Capacitance of TFETs • TFETs in Digital Design • TFETs in Analog Design • TFETs’ Circuit Layout Issues and Extra-parasitics • Chapter Summary • References

Chapter 5: Tunnel FET-based Charge Pumps • Motivation • Problems Associated with TFETs in Charge Pumps • Circuit-level Solutions for Reverse-biased TFETs • Proposed TFET-based Charge Pump • Capacitance Optimization of Charge-pump Stage • Charge Pumps’ Performance Comparison • Chapter Summary • References

Chapter 6: Tunnel FET-based Rectifiers • Motivation • State-of-the-art TFET-based Rectifier • Advantages of Tunnel FETs in Rectifiers • Drawbacks of Tunnel FETs in Rectifiers • Proposed Tunnel FET-based Rectifier • Optimization of the Proposed Rectifier • Performance Comparison of Rectifiers • Chapter Summary • References

Chapter 7: TFET-based Power-management Circuit for RF Energy Harvesting • Motivation • Challenges in RF Power Transport • Proposed TFET-based PMC • Startup Circuit • Boost Circuit • Challenges in TFET-based boost-converter design • Advantages of TFETs in PMC and boost converters • Controller Circuit • Simulation Results • Chapter Summary • References

Chapter 8: TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources • Motivation • Proposed TFET-based PMC for Ultra-low-power DC Sources • Startup Circuit • Boost Circuit • Controller Circuit • Simulated Results • Impact of TFET-based Circuit Layout and Parasitics • Chapter Summary • References

Chapter 9: Final Conclusions • Summary of Book Contributions • Future Work

Glossary

Index

About the Authors

About the Authors:

David Cavalheiro, Universitat Politècnica de Catalunya, Spain.

Francesc Moll, Universitat Politècnica de Catalunya, Spain.

Stanimir Valtchev, Universidade Nova de Lisboa, Portugal.

Target Audience:

People interested in Tunnel FET, Energy harvesting, Ultra-low-voltage circuits, nanopower, power management circuits.

 
Special prices are applicable to the authorised sales territory only.
Prices are subject to change without prior notice.